| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for polishing an organic film such as a resist film by low surface defect density. <P>SOLUTION: The method is provided with a process of abutting a semiconductor substrate having the organic film on a polishing cloth pasted onto a turn table, a process of a first polishing process for polishing the organic film by supplying a dispersion solution containing resin particles of≥0.05μm and≤5μm primary particle diameter onto the polishing cloth, and a second polishing cloth for polishing the organic film by supplying the solution of a surface active agent having a hydrophilic part onto the polishing cloth following the first polishing process. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
