Integrated Multi-Color Light Emitting Device Made With Hybrid Crystal Structure

摘要

An integrated hybrid crystal Light Emitting Diode (“LED”) display device that may emit red, green, and blue colors on a single wafer. The various embodiments may provide double-sided hetero crystal growth with hexagonal wurtzite III-Nitride compound semiconductor on one side of (0001) c-plane sapphire media and cubic zinc-blended III-V or II-VI compound semiconductor on the opposite side of c-plane sapphire media. The c-plane sapphire media may be a bulk single crystalline c-plane sapphire wafer, a thin free standing c-plane sapphire layer, or crack-and-bonded c-plane sapphire layer on any substrate. The bandgap energies and lattice constants of the compound semiconductor alloys may be changed by mixing different amounts of ingredients of the same group into the compound semiconductor. The bandgap energy and lattice constant may be engineered by changing the alloy composition within the cubic group IV, group III-V, and group II-VI semiconductors and within the hexagonal III-Nitrides.

主权项

1. A method of making a double sided hybrid crystal III-V/II-VI and III-Nitride compound semiconductor device, the method comprising:
providing a (0001) c-plane sapphire wafer; growing epitaxial III-Nitride layer structures on a second side of the (0001) c-plane sapphire wafer; depositing a first protective layer over the III-Nitride layer structures; growing epitaxial rhombohedral III-V or II-VI compound semiconductor layer structures on a first side of the (0001) c-plane sapphire wafer; and depositing a second protective layer over the rhombohedral III-V or II-VI compound semiconductor layer structures.