发明名称 METHOD FOR MANUFACTURING Ge-Mn MAGNETIC SEMICONDUCTOR THIN FILM
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a Ge-Mn magnetic semiconductor thin film by which the Ge-Mn magnetic semiconductor thin film made of ferromagnetic semiconductor substance with high Curie temperature can be manufactured. SOLUTION: A vapor deposition apparatus for vapor-deposition process by heat is used to connect to electrodes provided on the vapor deposition apparatus the ends of two boats to which the Ge of a 14 group semiconductor and the Mn of a 3d transition metal are respectively given. Different electric powers are applied to the two boats through the electrodes while they are gradually changed. The respective boats produce heat by electric resistance including in themselves, and they evaporate or sublime a given sample (Ge or Mn) by the heat, and the sample is deposited on a substrate that is located at a specified position within the deposition apparatus. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005327751(A) 申请公布日期 2005.11.24
申请号 JP20030365101 申请日期 2003.10.24
申请人 KOREA ADVANCED INST OF SCI TECHNOL 发明人 LIM SANG HO;SONG SANG HOON
分类号 H01F10/193;H01F10/187;H01F41/20;H01L29/82;(IPC1-7):H01F10/193 主分类号 H01F10/193
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