发明名称 |
METHOD FOR MANUFACTURING Ge-Mn MAGNETIC SEMICONDUCTOR THIN FILM |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a Ge-Mn magnetic semiconductor thin film by which the Ge-Mn magnetic semiconductor thin film made of ferromagnetic semiconductor substance with high Curie temperature can be manufactured. SOLUTION: A vapor deposition apparatus for vapor-deposition process by heat is used to connect to electrodes provided on the vapor deposition apparatus the ends of two boats to which the Ge of a 14 group semiconductor and the Mn of a 3d transition metal are respectively given. Different electric powers are applied to the two boats through the electrodes while they are gradually changed. The respective boats produce heat by electric resistance including in themselves, and they evaporate or sublime a given sample (Ge or Mn) by the heat, and the sample is deposited on a substrate that is located at a specified position within the deposition apparatus. COPYRIGHT: (C)2006,JPO&NCIPI |
申请公布号 |
JP2005327751(A) |
申请公布日期 |
2005.11.24 |
申请号 |
JP20030365101 |
申请日期 |
2003.10.24 |
申请人 |
KOREA ADVANCED INST OF SCI TECHNOL |
发明人 |
LIM SANG HO;SONG SANG HOON |
分类号 |
H01F10/193;H01F10/187;H01F41/20;H01L29/82;(IPC1-7):H01F10/193 |
主分类号 |
H01F10/193 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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