| 摘要 |
PROBLEM TO BE SOLVED: To speed up the whole device and reduce cost in a semiconductor device having DRAM(SOC) in which a DRAM section and a logic section are provided on one substrate while the DRAM section has sufficient features. SOLUTION: The semiconductor device includes: a transistor having a source-drain region selectively formed in the semiconductor substrate; an interlayer film covering the semiconductor substrate, a capacitor formed on the interlayer film and having a bottom electrode; and a contact plug including a metal in contact with the source-drain region of the transistor and the bottom electrode of the capacitor in the interlayer film. COPYRIGHT: (C)2006,JPO&NCIPI
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