| 摘要 |
PROBLEM TO BE SOLVED: To prevent the surface of a bonding pad from being contaminated by the polishing waste of a wafer back surface at the time of polishing the back surface. SOLUTION: The manufacturing method of a semiconductor device includes the process of forming a protective film on a layer including a scribe line 103 and the semiconductor device 102, and the process of selectively removing the protective film so as to remain at least at the scribe line part 103 of a substrate outer periphery and then polishing the back surface of a substrate 101. Thus, by filling a groove by a level difference generated at the time of forming the scribed line 103 in the layer including the plurality of semiconductor devices 102 with the protective film formed at the substrate outer periphery, the polishing waste of the back surface at the time of polishing the back surface of the substrate is prevented from intruding a region including the semiconductor device 102 from the side face of the substrate 101 through the groove of the scribe line 103, and contaminating the surface of the bonding pad. COPYRIGHT: (C)2006,JPO&NCIPI |
