METHOD OF FORMING VIA STRUCTURE AND METHOD OF FABRICATING PHASE CHANGE MEMORY ELEMENT MERGED OF SUCH VIA STRUCTURES

摘要

PROBLEM TO BE SOLVED: To provide a method of forming a conductive plug structure such as a via plug using a multitude of conductive patterns and also to provide a method of fabricating a semiconductor element including a semiconductor memory element such as the method of fabricating a phase change memory element. SOLUTION: The method of forming an electrically conductive layer on a semiconductor substrate and further forming a via structure includes a process of forming a molding dielectric layer on the electrically conductive layer. Via holes are formed in the dielectric layer to expose partially the electrically conductive layer. Formation of a first via filling layer and partial removal of the formed layer yield formation of a preliminary via plug. The present invention provides a multilayer plug structure of a multilayer structure with via holes inscribed therein, which is formed by repeating the formation and removal of a phase change material layer, thereby reducing defects and damages as compared to a plug structure formed by a conventional method. COPYRIGHT: (C)2006,JPO&NCIPI