| 摘要 |
A solid state imaging apparatus is provided to prevent multi-interference or reflection which is generated in the interface between an anti-reflection barrier and an insulating layer. A solid state imaging apparatus(100) comprises a semiconductor substrate(101), a photodiode(102), a transistor(103), interlayer films, Cu wiring, anti-reflection layers, a passivation layer(117), a micro lens(119), a device isolation area(120) and an anti-reflection film(125). The photodiode is formed on the semiconductor substrate, and converts the incident light photo-electrically as a light receiving device. The transistor is formed on the substrate, and includes a gate electrode(121) which is formed with a poly silicon and source/drain regions. The anti-reflection film is formed on the photodiode under the anti-reflection layer(122), and prevents the reflection of the incident light. A first interlayer film(104) is stacked on a surface on which the photodiode and the transistor are formed of the substrate, a second interlayer film(108) is stacked on a first anti-reflection layer(122), and a third interlayer film(112) is stacked on a second anti-reflection layer(123). A first Cu wiring(105) is formed on the first interlayer film, a second Cu wiring is formed on the second interlayer film, and the third Cu wiring is formed on the third interlayer film. The first anti-reflection layer is stacked on the first interlayer film and the first Cu wring(109). The second anti-reflection layer is stacked on the second interlayer film and the second Cu wiring. The third anti-reflection layer is stacked on the third interlayer film and the third Cu wiring(113).
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