| 摘要 |
<p>An organic thin film transistor and a manufacturing method thereof are provided to prevent an undercut phenomenon by forming an adhesive layer to improve adhesion properties of metal electrodes. An organic thin film transistor includes a transparent substrate(21), a gate electrode(22), a gate insulation film(23), first and second metal layers(24,25), and an organic semiconductor layer(29). The gate electrode is formed on the transparent substrate. The gate insulation film is formed to cover the gate electrode. The first and second metal layers are formed on the gate insulation film. The organic semiconductor layer is formed on the second metal layer. A lower surface of the second metal layer, which is adjoined with the first metal layer, is formed to be wider than an upper surface of the second metal layer.</p> |
