| 摘要 |
PROBLEM TO BE SOLVED: To improve quality and reliability by preventing joint defects of an electrode while suppressing a change in resistance under a high temperature environment. SOLUTION: A thin-film thermistor comprises: a silicon substrate 3, where an SiO<SB>2</SB>layer 2 is formed on the surface; a thermistor thin film 4 of which the pattern is formed on the upper surface of the SiO<SB>2</SB>layer 2; a junction layer 5 formed of a metal material except a rare metal, where the pattern of the junction layer 5 is formed on the upper surface of the SiO<SB>2</SB>layer 2; and the electrode 6 made of a rare metal, where the pattern of the electrode 6 is formed on the junction layer 5. Inside the thermistor thin film 4, there is a thin-film non-formation region 4a, where the thermistor thin film 4 is not formed. The junction layer 5 and the electrode 6 are buried in the thin-film non-formation region 4a and the side is joined to the inner surface of the thermistor thin film 4. One portion of the junction layer 5 and the electrode 6 in the thin-film non-formation region 4a is removed to adjust the value of resistance. COPYRIGHT: (C)2009,JPO&INPIT
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