| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming an etching mask, a control program, and a program storage medium, which can form easily with sufficient precision an fine pattern etching mask of nonlinear shape without using a reticle of complicated pattern. SOLUTION: The method for forming the etching mask transfers, develops, and trims an exposure pattern 10 of linear shape in a photo resist 11 using a first reticle, then etches an SiO<SB>2</SB>layer 12 making this as a mask. Next, it transfers and develops an exposure pattern 15 of linear shape in a photo resist 14 using a second reticle, then measures the amount of protrusion L of the photo resist 14 end from the SiO<SB>2</SB>layer 12. Next, while the pattern of the photo resist 14 is trimmed so as to be a predetermined thickness, length, the amount of protrusion L is made to be a predetermined amount or less, an etching mask of substantially L character shape is formed by etching an Si<SB>3</SB>N<SB>4</SB>layer 13 making this as a mask. COPYRIGHT: (C)2009,JPO&INPIT
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