| 摘要 |
A plasma etching method and computer-readable storage medium are provided to form the desired pattern of high precision by suppressing the generation of striation. The mounting platform(2) supporting the semiconductor wafer(W) is prepared within the process chamber(1). The mounting platform is made of aluminum and supports the support stand(4) of conductor. The focus ring(5) is prepared in the outer periphery of the upside of the main chuck. The inner wall member(3a) of cylindrical shape surrounds the surrounding of the support stand and main chuck. The mounting platform is connected to the first RF power(10a) through the first adapter(11a) and is connected to the second RF power(10b) to the second adapter(11b).
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