| 摘要 |
PROBLEM TO BE SOLVED: To provide a gallium-arsenic crystal substrate fixture and its manufacturing method designed to reduce uneven discoloration on the back surface of a wafer generated in the course of processing an epitaxial growth, and to solve degradation in quality of a compound semiconductor epitaxial wafer. SOLUTION: The gallium-arsenic crystal substrate fixture fixes the gallium-arsenic crystal substrate 2 by vacuum suction on the laser-mark processing of the crystal substrate 2 during a manufacturing process of a compound semiconductor epitaxial wafer. A portion in the fixture brought into contact with the gallium-arsenic crystal substrate 2 is formed of a polyacetal resin. COPYRIGHT: (C)2009,JPO&INPIT |
