ANTI-FUSE, ANTI-FUSE FORMING METHOD, AND UNIT CELL OF NONVOLATILE MEMORY DEVICE WITH THE SAME

摘要

PROBLEM TO BE SOLVED: To provide an anti-fuse improving operation reliability by causing stable breakdown in a gate dielectric layer of the anti-fuse comprised of a metal-oxide semiconductor (MOS) transistor to improve a data sensing margin during a reading operation, and to provide a fabrication method therefor and a unit cell of a nonvolatile memory device with the same. SOLUTION: The anti-fuse includes: a gate dielectric layer formed above a substrate; and a gate electrode including a body portion and a plurality of protruding portions extending from the body portion, wherein the body portion and the protruding portions are formed to contact on the gate dielectric layer; and a junction region formed in the substrate exposed to sidewalls of the protruding portions. COPYRIGHT: (C)2009,JPO&INPIT