发明名称 POWER TRANSISTORS HAING CONTROLLED EMITTER IMPURITY CONCENTRATIONS
摘要 <p>1316699 Transistors RCA CORPORATION 9 Sept 1971 [17 Sept 1970] 42174/71 Heading H1K In the manufacture of a transistor the value of # max is selected, the value of the sheet resistance of the active part of the base region calculated in advance of the emitter diffusion, and the conditions of emitter diffusion chosen so as to produce an emitter region the sheet resistance of which adjacent the emitter-base junction approximates to the quotient of calculated base sheet resistance and # max to within 50%, preferably to within 25%. The transistor has improved characteristics in respect of second breakdown.</p>
申请公布号 CA922423(A) 申请公布日期 1973.03.06
申请号 CA19710120157 申请日期 1971.08.09
申请人 RCA CORP 发明人 BARRY J FEHDER;DAVID L FRANKLIN
分类号 H01L29/00 主分类号 H01L29/00
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