| 摘要 |
1311659 Semi-conductor devices DEFENCE SECRETARY OF STATE FOR 22 July 1970 [30 July 1969] 38241/69 Heading H1K A substrate for a semi-conductor device comprises a matrix of "insulating" material in which are embedded a plurality of rod-like conductive parts extending parallel to one another between the major faces of the substrate, and formed by the directional solidification of a eutectic mixture. The substrate is produced by crystallizing a melt, the materials being selected so that a conductive phase in the form of rods extending parallel to the growing direction is formed in a matrix of a second insulating phase. The conductive rods may comprise GaTi 2 , MoAs, or CrAs in a matrix of GaAs, which is preferably semi-insulating, or NbSi 2 , TaSi 2 , or MoSi 2 in a matrix of Si. As shown, Fig. 3, a substrate 1 having conductive rods 5 in an insulating matrix 7 is produced by cutting a transverse slice from an ingot produced as described above. A semi-conductor device 3 is mounted or deposited (epitaxially or otherwise) on one surface of the substrate and electrical contacts 9 are applied by evaporation on the lower face of the substrate to make connections to parts of the semi-conductor device via appropriate groups of the conductive rods 5. |
