发明名称 |
Display backplane and method of fabricating the same |
摘要 |
There is provided a TFT backplane having at least one TFT with oxide active layer and at least one TFT with poly-silicon active layer. In the embodiments of the present disclosure, at least one of the TFTs implementing the circuit of pixels in the active area is an oxide TFT (i.e., TFT with oxide semiconductor) while at least one of the TFTs implementing the driving circuit next to the active area is a LTPS TFT (i.e., TFT with poly-Si semiconductor). |
申请公布号 |
US9490276(B2) |
申请公布日期 |
2016.11.08 |
申请号 |
US201414231586 |
申请日期 |
2014.03.31 |
申请人 |
LG Display Co., Ltd. |
发明人 |
Kim Hyoung-Su;Cho Namwook;Kim TaeHwan;Lee Jaemyon |
分类号 |
G06F3/038;H01L29/08;H01L27/12 |
主分类号 |
G06F3/038 |
代理机构 |
Fenwick & West LLP |
代理人 |
Fenwick & West LLP |
主权项 |
1. A display comprising:
a pixel circuit formed on a thin-film-transistor (TFT) backplane having an oxide TFT layer and a low-temperature-poly-silicon (LTPS) TFT layer on a same substrate, the pixel circuit comprising:
an organic light emitting diode (OLED) between a first supply voltage line of a first voltage and a second supply voltage line of a second voltage lower than the first voltage, anda driving TFT including the oxide TFT layer, the driving TFT connected to the first supply voltage line and coupled in series with the OLED to the second supply voltage line, a gate of the driving TFT coupled to a data line to receive a data signal. |
地址 |
Seoul KR |