| 发明名称 | Method and apparatus for forming silicon film | ||
| 摘要 | Provided is a method of forming a silicon film in a groove formed on a surface of an object to be processed, which includes: forming a first silicon layer on the surface of the object to be processed to embed the groove; doping impurities near a surface of the first silicon layer; forming a seed layer on the doped first silicon layer; and forming a second silicon layer containing impurities on the seed layer. | ||
| 申请公布号 | US9490139(B2) | 申请公布日期 | 2016.11.08 |
| 申请号 | US201414449744 | 申请日期 | 2014.08.01 |
| 申请人 | TOKYO ELECTRON LIMITED | 发明人 | Komori Katsuhiko;Okada Mitsuhiro |
| 分类号 | H01L21/205;H01L21/285;C23C16/24;H01L21/3205;H01L21/3213;H01L21/3215;C23C16/04;C23C16/455;H01L21/768 | 主分类号 | H01L21/205 |
| 代理机构 | Nath, Goldberg & Meyer | 代理人 | Nath, Goldberg & Meyer ;Meyer Jerald L. |
| 主权项 | 1. A method of forming a silicon film in a groove formed on a surface of an object to be processed, the method comprising: forming a first silicon layer on the surface of the object to be processed to embed the groove; doping impurities near a surface of the first silicon layer; forming a first seed layer on the doped first silicon layer; and forming a second silicon layer containing impurities on the first seed layer, wherein forming the first silicon layer includes supplying a gas containing impurities and SiH4 so that the first silicon layer is formed to contain the impurities by in-situ doping. | ||
| 地址 | Tokyo JP | ||