Method of substrate temperature control during high temperature wet processing

摘要

Methods are provided for processing a substrate in single substrate tool. In one embodiment, the method includes providing the substrate in the single substrate tool, applying a first processing fluid at a first temperature greater than 100° C. to a lower surface of the substrate to heat the substrate to approximately the first temperature, and applying a second processing fluid at a second temperature greater than 100° C. to an upper surface of the substrate.

主权项

1. A method for processing a substrate having a nitride film on the upper surface of the substrate in single substrate tool, the method comprising:
providing the substrate having a nitride film on the upper surface of the substrate in the single substrate tool; applying a first processing fluid at a first temperature greater than 100° C. to a lower surface of the substrate to heat the substrate to approximately the first temperature, wherein the first processing fluid comprises phosphoric acid, sulfuric acid, or a mixture thereof; and applying a second processing fluid at a second temperature greater than 100° C. to an upper surface of the substrate to etch the nitride film on the upper surface of the substrate, wherein the second processing fluid comprises phosphoric acid, sulfuric acid, or a mixture thereof.