Substrate, semiconductor device, and method of manufacturing the same

摘要

A substrate capable of achieving a lowered probability of defects produced in a step of forming an epitaxial film or a semiconductor element, a semiconductor device including the substrate, and a method of manufacturing a semiconductor device are provided. A substrate is a substrate having a front surface and a back surface, in which at least a part of the front surface is composed of single crystal silicon carbide, the substrate having an average value of surface roughness Ra at the front surface not greater than 0.5 nm, a standard deviation σ of that surface roughness Ra not greater than 0.2 nm, an average value of surface roughness Ra at the back surface not smaller than 0.3 nm and not greater than 10 nm, standard deviation σ of that surface roughness Ra not greater than 3 nm, and a diameter D of the front surface not smaller than 110 mm.

主权项

1. A substrate having a front surface and a back surface, the back surface having a distorted crystal lattice, and at least a part of said front surface is composed of single crystal silicon carbide,
said substrate having an average value of surface roughness Ra at said front surface not greater than 0.5 nm and a standard deviation of said surface roughness Ra not greater than 0.2 nm, and an average value of surface roughness Ra at said back surface less than 0.3 nm and a diameter of said front surface not smaller than 125 mm and not greater than 300 mm.