PROCEDE DE FABRICATION D'UNE BARRE D'ARSENIURE DE GALLIUM MONOCRISTALLINE EXEMPTE DE DISLOCATION

摘要

An improved method for drawing dislocation-free, single crystal gallium arsenide rods in which the drawing vessel is filled with an inert gas of a preselected conductivity at a predetermined pressure, additional arsenic is added to maintain a desired partial pressure, and the melt temperature is controlled to initially draw a "narrow-neck" and then decreased until a crystal of the desired diameter is being drawn. The initial drawing of the narrow neck causes the dislocations to travel in the direction of their growth and disappear, after which a crystal of the desired diameter with dislocations may be drawn.