MEMORY SYSTEM, METHOD OF PROGRAMMING THE MEMORY SYSTEM, AND METHOD OF TESTING THE MEMORY SYSTEM

摘要

A method of programming a memory system includes repetitively performing N program loops for a selected memory cell (where N is a natural number equal to or greater than two). Each of the N program loops includes a program operation and a program verify operation. At least one of the N program loops includes performing the program operation on the selected memory cell and on at least one additionally selected memory cell by applying a program voltage to at least one word line to which the selected memory cell and at least one additionally selected memory cell are connected, and performing the program verify operation on the selected memory cell by applying a program verify voltage to a selected word line to which the selected memory cell is connected.

主权项

1. A memory device comprising:
a memory cell array including a plurality of strings, each string including a plurality of memory cells; and a control logic configured to control a first program loop during which a program operation is performed on first and second memory cells of a first string selected among the plurality of strings and then a program verify operation is performed on the first memory cell, and a second program loop during which the program operation and the program verify operation are sequentially performed only on the first memory cell, wherein the first and second memory cells are respectively connected to first and second word lines.