Complex semiconductor devices of the SOI type

摘要

The present disclosure provides, in a first aspect, a semiconductor device including an SOI substrate portion, a gate structure formed on the SOI substrate portion and source and drain regions having respective source and drain height levels, wherein the source and drain height levels are different. The semiconductor device may be formed by forming a gate structure over an SOI substrate portion, recessing the SOI substrate portion at one side of the gate structure so as to form a trench adjacent to the gate structure and forming source and drain regions at opposing sides of the gate structure, one of the source and drain regions being formed in the trench.

主权项

1. A method of forming a semiconductor device, the method comprising:
forming a gate structure over an SOI substrate, said SOI substrate comprising a base semiconductor material, a buried insulation material positioned above said base semiconductor material and a semiconductor film positioned above said buried insulation layer, said gate structure having first and second opposing sides; performing at least one process operation to remove a portion of said semiconductor film and to remove a portion of said buried insulation layer located proximate said first opposing side of said gate structure so as to form a trench proximate said first opposing side without removing a portion of said semiconductor film or a portion of said buried insulation layer on said second opposing side; forming a first source and drain region in said trench on said first opposing side; and forming a second source and drain region on said semiconductor film on said second opposing side.