Memory device and associated erase method

摘要

A memory device and an erase method for the memory device are provided. The memory device includes plural blocks and a controller. The plural blocks include at least one first block and at least one second block. The erase method is controlled by the controller and includes the following steps. A first stage erase operation and a second stage erase operation are sequentially performed on the at least one first block in a first time interval and a second time interval. The first stage erase operation and the second stage erase operation are sequentially performed on the at least one second block in the second time interval and a third time interval.

主权项

1. An erase method for a memory device with a plurality of blocks, the erase method comprising steps of:
sequentially performing a first stage erase operation and a second stage erase operation on at least one first block of the plurality of blocks in a first time interval and a second time interval; and sequentially performing the first stage erase operation and the second stage erase operation on at least one second block of the plurality of blocks in the second time interval and a third time interval, wherein in the second time interval, the first stage erase operation performed on the at least one second block and the second stage erase operation performed on the at least one first block are different.