| 摘要 |
A magnetic field effect transistor comprises a semiconductor body with a region of a specific type of conductivity, a source and a drain electrode between which is provided a channel region formed by a narrowed part of the region of the specific type of conductivity at least one barrier layer defining the channel region and controlling the channel region through the space charge region issuing from the barrier layer, and at least one additional electrode positioned laterally of the direct charge carrier path between the source and drain electrodes and to which at least part of the charge carrier can be deflected in the presence of a suitable magnetic field.
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