发明名称 METHOD OF CUTTING CONDUCTIVE PATTERNS
摘要 A method includes patterning a layer over a substrate with a first metal pattern; using a cut mask in a first position relative to the substrate to perform a first cut patterning for removing material from a first region within the first pattern; and using the same cut mask to perform a second cut patterning while in a second position relative to the same layer over the substrate, for removing material from a second region in a second metal pattern of the same layer over the substrate.
申请公布号 US2016320706(A1) 申请公布日期 2016.11.03
申请号 US201615189311 申请日期 2016.06.22
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 HSU Chin-Hsiung;CHEN Huang-Yu;OU Tsong-Hua;CHEN Wen-Hao
分类号 G03F7/20;G06F17/50;G03F1/70;H01L21/3213 主分类号 G03F7/20
代理机构 代理人
主权项 1. A method comprising: providing a first layout of a layer over a substrate having a first metal pattern and a second metal pattern, and generating a second layout of a cut mask having a cut pattern to be used in a first cut patterning step while the cut mask is in a first position relative to the substrate to remove material from a first region of the first metal pattern to divide the first metal pattern into a third metal pattern and a fourth metal pattern, such that the same cut mask is to be used in a second cut patterning step while the cut mask is in a second position relative to the layer over the substrate to remove material from a second region of the second metal pattern to divide the second metal pattern into a fifth metal pattern and a sixth metal pattern.
地址 Hsin-Chu TW