发明名称 |
METHOD OF CUTTING CONDUCTIVE PATTERNS |
摘要 |
A method includes patterning a layer over a substrate with a first metal pattern; using a cut mask in a first position relative to the substrate to perform a first cut patterning for removing material from a first region within the first pattern; and using the same cut mask to perform a second cut patterning while in a second position relative to the same layer over the substrate, for removing material from a second region in a second metal pattern of the same layer over the substrate. |
申请公布号 |
US2016320706(A1) |
申请公布日期 |
2016.11.03 |
申请号 |
US201615189311 |
申请日期 |
2016.06.22 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
HSU Chin-Hsiung;CHEN Huang-Yu;OU Tsong-Hua;CHEN Wen-Hao |
分类号 |
G03F7/20;G06F17/50;G03F1/70;H01L21/3213 |
主分类号 |
G03F7/20 |
代理机构 |
|
代理人 |
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主权项 |
1. A method comprising:
providing a first layout of a layer over a substrate having a first metal pattern and a second metal pattern, and generating a second layout of a cut mask having a cut pattern to be used in a first cut patterning step while the cut mask is in a first position relative to the substrate to remove material from a first region of the first metal pattern to divide the first metal pattern into a third metal pattern and a fourth metal pattern, such that the same cut mask is to be used in a second cut patterning step while the cut mask is in a second position relative to the layer over the substrate to remove material from a second region of the second metal pattern to divide the second metal pattern into a fifth metal pattern and a sixth metal pattern. |
地址 |
Hsin-Chu TW |