发明名称 OHMIC CONTACT FOR P-TYPE GROUP III-V SEMICONDUCTORS
摘要 Layers of gold, gold-zinc, and gold are successively evaporated onto p-type semiconductor material of Group III-V such as gallium phosphide, and sintered. Other metallic Group II elements can be substituted for the zinc. An initial layer of gold may first be evaporated and alloyed into the p-type material.
申请公布号 US3850688(A) 申请公布日期 1974.11.26
申请号 US19720316130 申请日期 1972.12.18
申请人 GENERAL ELECTRIC CO,US 发明人 HALT I,US
分类号 H01L23/045;(IPC1-7):B44D1/18;B44D1/14 主分类号 H01L23/045
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