SiC SINGLE CRYSTAL SEED, SiC INGOT, PRODUCTION METHOD OF SiC SINGLE CRYSTAL SEED, AND PRODUCTION METHOD OF SiC SINGLE CRYSTAL INGOT

摘要

PROBLEM TO BE SOLVED: To suppress generation of heterogeneous polymorphism, and to suppress outflow of crystal dislocation following high-density screw dislocation generation origin introduction, and generation of a crystal defect.SOLUTION: In an SiC single crystal seed having a principal surface having an off-set angle of 2° or more and 20° or less to {0001} plane, and one or more sub-growth surfaces, an initial facet formation surface positioned on the furthermore off-set upstream side than the principal surface, and having such a tilt angle θ to the {0001} plane that its absolute value is below 2° in every direction is included in the sub-growth surface, and the initial facet formation surface has a screw dislocation generation origin.SELECTED DRAWING: Figure 1