| 摘要 |
<p>Liquid phase epitaxial deposition process for making a monocrystalline layer of which at least one constituent is volatile comprises either or both of (a) contacting a solid phase with a predetermined volume of liquid phase and allowing the phases to react equilibrium at a predetermined temp., and (b) simultaneously cooling the phases at a predetermined speed combined with evaporation of the volatile constituent from the liquid phase such that the speed of growth of the layer is slow enough to avoid prodn. of crystalline defects. The evaporation is promoted by sweeping the reaction chamber with a flow of gas e.g. Ar at a pressure of a few torr. The phases present are elementary Pb, Sn, Te, the Te content of the liquid phase being less than that of the solid phase.</p> |
