发明名称 IIIa - Vb Type luminescent diodes
摘要 Due to its dopant structure, the radiative layer of a IIIa - Vb type luminescent diode, emitting light radiation in the plane of the PN-junction, possesses differences in delay time of </= 10<->10 seconds, which permit an extension to higher frequencies.
申请公布号 US3911462(A) 申请公布日期 1975.10.07
申请号 US19720282190 申请日期 1972.08.09
申请人 JENOPTIK JENA G.M.B.H. 发明人 BUTTER, EHRENFRIED;JACOBS, BRIGITTE;JACOBS, KLAUS;UNGER, KONRAD;ZEHE, ALFRED;DOSS, REINER;KUGLER, FLORIAN
分类号 H01L21/208;H01L33/00;(IPC1-7):H01L33/00 主分类号 H01L21/208
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