发明名称 |
Method of MOS transistor manufacture |
摘要 |
An MOS transistor is constructed such that the insulation covering the field of the device and in direct contact with the top surface of the semiconductor material in which the source and drain regions are formed, tapers gradually in thickness to that of the insulation under the gate electrode thereby to prevent abrupt step-heights in the transition region between the field insulation and the gate insulation.
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申请公布号 |
US3913211(A) |
申请公布日期 |
1975.10.21 |
申请号 |
US19740441098 |
申请日期 |
1974.02.11 |
申请人 |
FAIRCHILD CAMERA AND INSTRUMENT CORPORATION |
发明人 |
SEEDS, ROBERT B.;LUCE, ROBERT L. |
分类号 |
H01L21/00;H01L21/285;H01L21/32;H01L21/762;H01L29/00;(IPC1-7):B01J17/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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