Method of manufacturing high breakdown voltage rectifiers

摘要

A method of manufacturing rectifying device by cutting a lamination of semiconductor wafers each having a P-N junction formed therein along planes perpendicular to the plane of the wafer and subjecting the resultant divided series diode laminations to an etching treatment with a blend etching liquid composed of hydrogen fluoride, nitric acid and acetic acid. The etching liquid strongly acts upon the N-type region, while it weakly acts upon the P-type region, so that a configuration similar to that which would be obtained through a positive bevel treatment may be obtained. Thus, it is possible to obtain a high breakdown voltage rectifier which is hardly subject to destruction due to a transient reverse voltage.