| 摘要 |
<p>A semiconductor monocrystal grown on a crystal of an electrically insulating material is compensated for lattice stresses in the monocrystal, resulting from the difference in the physical properties of the 2 materials. The compensation can be achieved by (a) changing the compsn. of or (b) adding an element to at least one of the crystals at least at the boundary zone between the crystals or (c) mixing at least one of the crystals with the other, so that the difference in the lattice constants between the 2 crystals is reduced. Method is used for Si and other semiconductor monocrystals on spinel, quartz (alpha-SiO2), sapphire (Al2O3), zircon (ZrSiO4), carborundum (alpha-SiC), Be oxide (alpha-Be) etc. and their mixts.</p> |
