| 摘要 |
1434437 Doped cadmium telluride COMMISSARIAT A L'ENERGIE ATOMIQUE 22 April 1974 [11 May 1973] 17511/74 Heading C1A [Also in Divisions C4-C5 and B1] A method of preparation of a single crystal of cadmium telluride without impurities other than the doping agents and having a low concentration of dislocations, twinning and other crystallographic defects comprises three crystallization operations, of which at least the third is performed in the presence of doping agents introduced in controlled amounts, which are performed successively as follows: in a first operation, an imperfect ingot of cadmium telluride is synthesized from cadmium and tellurium in the pure state and in stoichiometric proportions; in a second operation, said imperfect ingot is melted and recrystallized at a temperature close to the melting point of cadmium telluride, so producing a polycrystalline ingot of higher purity but still containing a high concentration of defects; and in a third operation, the crystal is dissolved in and recrystallized from molten tellurium containing dissolved therein a dopant at a temperature between 450‹ and 950‹ C. |
