Method for fabricating silicon photonic waveguides

摘要

A method for fabricating electronic and photonic devices on a semiconductor substrate using complementary-metal oxide semiconductor (CMOS) technology is disclosed. A substrate is initially patterned to form a first region for accommodating electronic devices and a second region for accommodating photonic devices. The substrate within the first region is thicker than the substrate within the second region. Next, an oxide layer is formed on the substrate. The oxide layer within the first region is thinner than the oxide layer within the second region. A donor wafer is subsequently placed on top of the oxide layer. The donor substrate includes a bulk silicon substrate, a sacrificial layer and a silicon layer. Finally, the bulk silicon substrate and the sacrificial layer are removed from the silicon layer such that the silicon layer remains on the oxide layer.

主权项

1. An integrated circuit comprising:
a substrate having a first region for accommodating electronic devices and a second region for accommodating photonic devices, wherein said first region is directly adjacent to said second region, wherein said substrate within said first region is thicker than said substrate within said second region; an oxide layer located directly on said substrate within said first and second regions, wherein said oxide layer within said first region is thinner than said oxide layer within said second region; and a silicon layer located directly on said oxide layer within said first and second regions.