| 发明名称 |
SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD |
| 摘要 |
PURPOSE:To obtain a high integration and high speed operation by forming an emitter electrode and a collector electrode which have polycrystal semiconductor layer of reversed trapezoid type on the emitter and collector areas and by providing a space between the electrodes in the vertical direction. |
| 申请公布号 |
JPS5215262(A) |
申请公布日期 |
1977.02.04 |
| 申请号 |
JP19750091090 |
申请日期 |
1975.07.28 |
| 申请人 |
NIPPON TELEGRAPH & TELEPHONE |
发明人 |
SAKAI TETSUSHI |
| 分类号 |
H01L21/3205;H01L21/225;H01L21/28;H01L21/285;H01L21/306;H01L21/314;H01L21/331;H01L23/532;H01L29/417;H01L29/43;H01L29/73 |
主分类号 |
H01L21/3205 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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