| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of suppressing ununiformity in dopant concentration of a semiconductor layer on a diffraction grating.SOLUTION: A method of manufacturing a semiconductor device includes the following steps of: forming on a semiconductor substrate a diffraction grating layer having unevenness on a surface; forming a first semiconductor layer on the unevenness of the diffraction grating layer; and forming a second semiconductor layer on the first semiconductor layer. A set growth speed of the first semiconductor layer is set to be smaller than that of the second semiconductor layer.SELECTED DRAWING: Figure 3 |
