| 发明名称 |
LIQUID PHASE EPITAXIAL GROWTH |
| 摘要 |
<p>PURPOSE:To form good quality eqitaxial layers by separating protecting cover from substrate near the place where by substrate is contacted with a solution, and performing epitaxial growth by dipping the substrate in the solution.</p> |
| 申请公布号 |
JPS5259568(A) |
申请公布日期 |
1977.05.17 |
| 申请号 |
JP19750134698 |
申请日期 |
1975.11.11 |
| 申请人 |
TOKYO SHIBAURA ELECTRIC CO |
发明人 |
USHIZAWA JISABUROU;WATANABE YUKIO |
| 分类号 |
C30B19/00;H01L21/208;H01L33/30 |
主分类号 |
C30B19/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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