METHOD OF UTILIZING TRENCH SILICIDE IN A GATE CROSS-COUPLE CONSTRUCT

摘要

A method of forming a logic cell utilizing a TS gate cross-couple construct and the resulting device are provided. Embodiments include forming active fins and dummy fins on a substrate, the dummy fins adjacent to each other and between the active fins; forming STI regions between and next to the active and dummy fins; forming gate structures in parallel across the active and dummy fins; forming a gate cut region by cutting the gate structures between the dummy fins; forming a TS layer between the gate structures, the TS layer crossing the gate cut region; and forming a contact connecting a gate structure and the TS layer on a first side of the gate cut region and forming a contact connecting a gate structure and the TS layer on a second side of the gate cut region, the TS layer and contacts cross coupling the gate structures.

主权项

1. A method comprising:
forming first and second active fins and first and second dummy fins on a substrate, the first and second dummy fins adjacent to each other and between the first and second active fins; forming shallow trench insolation (STI) regions between and next to the first and second active fins and the first and second dummy fins; forming first and second self-aligned gate structures in parallel across the first and second active fins and the first and second dummy fins; forming first and second capping layers on the first and second self-aligned gate structures, respectively; forming a gate cut region by cutting both the first and second self-aligned gate structures and the first and second capping layers between the first and second dummy fins; forming a trench silicide (TS) layer between the first and second gate structures, the TS layer crossing the gate cut region; and forming a first self-aligned contact connecting the first gate structure and the TS layer on a first side of the gate cut region and forming a second self-aligned contact connected to the second gate structure and the TS layer on a second side of the gate cut region, the TS and the first and second self-aligned contacts cross coupling the first and second gate structures.