发明名称 |
PROCESS OF FILLING THE HIGH ASPECT RATIO TRENCHES BY CO-FLOWING LIGANDS DURING THERMAL CVD |
摘要 |
Implementations of the present disclosure generally relate to methods for forming thin films in high aspect ratio feature definitions. In one implementation, a method of processing a substrate in a process chamber is provided. The method comprises flowing a boron-containing precursor comprising a ligand into an interior processing volume of a process chamber, flowing a nitrogen-containing precursor comprising the ligand into the interior processing volume and thermally decomposing the boron-containing precursor and the nitrogen-containing precursor in the interior processing volume to deposit a boron nitride layer over at least one or more sidewalls and a bottom surface of a high aspect ratio feature definition formed in and below a surface of a dielectric layer on the substrate. |
申请公布号 |
US2016293483(A1) |
申请公布日期 |
2016.10.06 |
申请号 |
US201615083590 |
申请日期 |
2016.03.29 |
申请人 |
Applied Materials, Inc. |
发明人 |
MANNA Pramit;CHENG Rui;CHAN Kelvin;MALLICK Abhijit Basu |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
1. A method of processing a substrate, comprising:
flowing a boron-containing precursor comprising a ligand into an interior processing volume of a process chamber; flowing a nitrogen-containing precursor comprising the ligand into the interior processing volume; and thermally decomposing the boron-containing precursor and the nitrogen-containing precursor in the interior processing volume to deposit a boron nitride layer over at least one or more sidewalls and a bottom surface of a high aspect ratio feature definition formed in and below a surface of a dielectric layer on the substrate. |
地址 |
Santa Clara CA US |