| 发明名称 |
PRODUCTION OF SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE:To provide resistance elements of a given value in compact by forming islands of poly-Si on the poly-Si layer over the insualtion film of a substrate through an insulation film and diffusing an impurity. |
| 申请公布号 |
JPS52154392(A) |
申请公布日期 |
1977.12.22 |
| 申请号 |
JP19760071121 |
申请日期 |
1976.06.18 |
| 申请人 |
HITACHI LTD |
发明人 |
SHIMADA SHIGERU |
| 分类号 |
H01L27/04;H01L21/02;H01L21/822;H01L27/06;H01L29/78 |
主分类号 |
H01L27/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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