| 发明名称 |
WORKING OF SINGLE CRYSTAL OF FERROELECTRIC MATERIAL |
| 摘要 |
PURPOSE:To perform the working or cutting of single crystal of lithium tantalate, etc. in good yields without difficulty, by previously etching and removing a surface layer having a density of the defect. |
| 申请公布号 |
JPS5315590(A) |
申请公布日期 |
1978.02.13 |
| 申请号 |
JP19760089903 |
申请日期 |
1976.07.28 |
| 申请人 |
TOKYO SHIBAURA ELECTRIC CO |
发明人 |
FUKUDA SHIYOUSEI;HIRANO HITOSHI |
| 分类号 |
H01L41/22;H01B3/00 |
主分类号 |
H01L41/22 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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