Methods of Forming a Mask for Substrate Patterning

摘要

Patterning methods for creating features with sub-resolution dimensions that are self-aligned in photoresist materials. Techniques include selectably creating antispacers (or spacers) in soft materials, such as photoresist. A photoresist without a photo acid generator is deposited on a relief pattern of a solubility-neutralized photoresist material having a photo acid generator. A photomask then defines where photo acid is generated from a corresponding activating exposure. Photo acid is then diffused into the photoresist, that is free of the photo acid generator, to cause a solubility shift for subsequent development. These selectably-created antispacers can be line segments having widths defined by acid diffusion lengths, which can be widths of 1 nanometer to tens of nanometers. Moreover, the creation of antispacers, their location, and length, can be controlled using a photomask.

主权项

1. A method of patterning a substrate, the method comprising:
receiving a substrate having a first relief pattern positioned on a target layer of the substrate, the first relief pattern including one or more structures positioned on the target layer such that portions of the target layer are covered and remaining portions of the target layer are uncovered, the first relief pattern having been at least partially created using a first photomask, the first relief pattern comprised of a first photoresist material that includes a generator compound that generates a solubility-changing agent in response to exposure to actinic radiation; executing a solubility-neutralizing treatment that prevents a subsequent change in solubility of the first relief pattern from actinic radiation; depositing an overcoat material on the substrate, the overcoat material at least filling spaces defined by the one or more structures of the first relief pattern, the overcoat material being free of the generator compound that generates the solubility-changing agent in response to exposure to actinic radiation; transferring the substrate to a photolithographic system that exposes selected portions of the first relief pattern to actinic radiation using a second photomask, the actinic radiation causing the selected portions of the first relief pattern to generate the solubility-changing agent from the generator compound; and causing the solubility-changing agent to diffuse from the selected portions of the first relief pattern into the overcoat material at interfaces between the selected portions of first relief pattern and the overcoat material, the solubility-changing agent changing a solubility of portions of the overcoat material having received sufficient solubility-changing agent.