MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a high-performance semiconductor device including an oxide semiconductor.SOLUTION: A manufacturing method for a semiconductor device includes: forming an oxide semiconductor layer on a substrate; forming a first conductive layer on the oxide semiconductor layer; forming a second conductive layer on the first conductive layer; forming a first pattern by etching the second conductive layer; expanding the first pattern by oxidation; forming a second pattern to serve as a source electrode and a drain electrode by etching the first conductive layer using the expanded first pattern as a mask; forming a gate insulating layer covering the expanded first pattern, the second pattern, and the oxide semiconductor layer; and forming a gate electrode on the gate insulating layer.SELECTED DRAWING: Figure 1