发明名称 |
SEMICONDUCTOR DEVICE AND OPERATING METHOD THEREOF |
摘要 |
A method of operating a semiconductor memory device includes applying a program pulse at least once to each of a plurality of pages; performing a pre-read operation on a reference page among the plurality of pages through an initial test voltage; repeating the pre-read operation by controlling the initial test voltage until a result of the pre-read operation is a pass; setting the initial test voltage of when the result of the pre-read operation is the pass as a reference test voltage; and detecting a defective page among the plurality of pages by performing read operations on the plurality of pages through the reference test voltage. |
申请公布号 |
US2016293271(A1) |
申请公布日期 |
2016.10.06 |
申请号 |
US201514953194 |
申请日期 |
2015.11.27 |
申请人 |
SK hynix Inc. |
发明人 |
WON Sam Kyu;KIM Myung Su;CHA Jae Won |
分类号 |
G11C29/04;G11C16/34;G11C16/12;G11C16/28 |
主分类号 |
G11C29/04 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method of operating a semiconductor memory device, the method comprising:
applying a program pulse at least once to each of a plurality of pages; performing a pre-read operation on a reference page among the plurality of pages through an initial test voltage; repeating the pre-read operation by controlling the initial test voltage until a result of the pre-read operation is a pass; setting the initial test voltage of when the result of the pre-read operation is the pass as a reference test voltage; and detecting a defective page among the plurality of pages by performing read operations on the plurality of pages through the reference test voltage. |
地址 |
Gyeonggi-do KR |