发明名称 SEMICONDUCTOR DEVICE AND OPERATING METHOD THEREOF
摘要 A method of operating a semiconductor memory device includes applying a program pulse at least once to each of a plurality of pages; performing a pre-read operation on a reference page among the plurality of pages through an initial test voltage; repeating the pre-read operation by controlling the initial test voltage until a result of the pre-read operation is a pass; setting the initial test voltage of when the result of the pre-read operation is the pass as a reference test voltage; and detecting a defective page among the plurality of pages by performing read operations on the plurality of pages through the reference test voltage.
申请公布号 US2016293271(A1) 申请公布日期 2016.10.06
申请号 US201514953194 申请日期 2015.11.27
申请人 SK hynix Inc. 发明人 WON Sam Kyu;KIM Myung Su;CHA Jae Won
分类号 G11C29/04;G11C16/34;G11C16/12;G11C16/28 主分类号 G11C29/04
代理机构 代理人
主权项 1. A method of operating a semiconductor memory device, the method comprising: applying a program pulse at least once to each of a plurality of pages; performing a pre-read operation on a reference page among the plurality of pages through an initial test voltage; repeating the pre-read operation by controlling the initial test voltage until a result of the pre-read operation is a pass; setting the initial test voltage of when the result of the pre-read operation is the pass as a reference test voltage; and detecting a defective page among the plurality of pages by performing read operations on the plurality of pages through the reference test voltage.
地址 Gyeonggi-do KR