发明名称 |
Optoelectronic device and method for producing an optoelectronic device |
摘要 |
A method is provided for producing an optoelectronic device, comprising the steps of providing a substrate, applying a nucleation layer on a surface of the substrate, applying and patterning a mask layer on the nucleation layer, growing a nitride semiconductor in a first growth step, wherein webs are laid which form a lateral lattice, wherein the webs have trapezoidal cross-sectional areas in places in the direction of growth, and laterally overgrowing the webs with a nitride semiconductor in a second growth step, to close spaces between the webs. |
申请公布号 |
US9466759(B2) |
申请公布日期 |
2016.10.11 |
申请号 |
US201314430538 |
申请日期 |
2013.09.18 |
申请人 |
OSRAM OPTO SEMICONDUCTORS GMBH |
发明人 |
Hertkorn Joachim;Ahl Jan-Philipp;Zini Lorenzo;Peter Matthias;Meyer Tobias;Frey Alexander |
分类号 |
H01L33/32;H01L33/00;H01L21/02;H01L33/02;H01L33/14;H01L33/22 |
主分类号 |
H01L33/32 |
代理机构 |
McDermott Will & Emery LLP |
代理人 |
McDermott Will & Emery LLP |
主权项 |
1. A method for producing an optoelectronic device with the following steps:
providing a substrate; applying a nucleation layer to a surface of the substrate; applying and patterning a mask layer on the nucleation layer; growing a nitride semiconductor in a first growth step, wherein webs are laid which form a lateral lattice, wherein the webs have trapezoidal cross-sectional areas in the direction of growth; laterally overgrowing the webs with a nitride semiconductor in a second growth step, to close spaces between the webs, wherein a surface of the webs having trapezoidal cross-sectional areas remote from the substrate is a c-surface running parallel to the substrate; and depositing, after the second growth step, a functional layer sequence comprising an actively luminous layer, wherein defects that extend in a vertical direction to the c-surface of the webs continue in the vertical direction and bring about a formation of v-defects in the functional layer sequence. |
地址 |
Regensburg DE |