Method for manufacturing array substrate, array substrate, and display device

摘要

The present invention relates to the field of liquid crystal display, and provides a method for manufacturing an array substrate, the array substrate, and a display device. In the array substrate, a gate insulating layer between source and drain electrodes and a pattern of a gate electrode has a thickness greater than that of the gate insulating layer between an active layer and the pattern of the gate electrode. Due to the thick gate insulating layer between the source and drain electrodes and the pattern of the gate electrodes, the capacitance between the source and drain electrodes and the gate electrodes will be reduced.

主权项

1. A method for manufacturing an array substrate, comprising:
subjecting a gate insulating layer in a region between a source electrode and a drain electrode to a partial etching treatment by a one-time patterning process; forming an active layer by a one-time patterning process, the active layer covering a partially-etched region of the gate insulating layer, and the active layer being located between a first portion of a gate electrode and the source and drain electrodes; and forming the gate electrode by a one-time patterning process, the gate electrode also including a second portion that is separated from the first portion of the gate electrode, wherein the first and second portions of the gate electrode are located at different sides of the gate insulating layer, and a first thickness of the gate insulating layer between (i) the source and drain electrodes and (ii) the first portion of the gate electrode is greater than a second thickness of the gate insulating layer between (i) the active layer and the first portion of the gate electrode, the second thickness being at a location between the source and drain electrodes.