Semiconductor device

摘要

A semiconductor device that is suitable for miniaturization is provided. A semiconductor device including a first element, a first insulator over the first element, a first barrier film over the first insulator, a first conductor over the first barrier film, a second barrier film over the first conductor, a second insulator over the second barrier film, and a semiconductor over the second insulator is provided. The first conductor is surrounded by the first barrier film and the second barrier film.

主权项

1. A semiconductor device comprising:
a first transistor; a barrier film over the first transistor; and a second transistor comprising:
a first electrode in contact with the barrier film;an oxide semiconductor layer over the first electrode;a source electrode or a drain electrode connected to the oxide semiconductor layer; anda second electrode over the first electrode, wherein the source electrode or the drain electrode is electrically connected to a gate electrode of the first transistor, wherein the source electrode or the drain electrode is in an opening which penetrates the oxide semiconductor layer, and wherein the first electrode is surrounded by the barrier film.