Method of depositing metals using high frequency plasma

摘要

Methods for depositing metal layers, and more specifically TaN layers, using CVD and ALD techniques are provided. In one or more embodiments, the method includes sequentially exposing a substrate to a metal precursor, or more specifically a tantalum precursor, followed by a high frequency plasma.

主权项

1. A method of depositing a tantalum nitride film on a surface of a substrate, the method comprising:
placing the substrate in a processing chamber comprising a gas distribution plate, the gas distribution plate comprising at least one first reactive gas injector and at least one second reactive gas injector, the at least one first reactive gas injector providing a tantalum precursor and the at least one second reactive gas injector providing a high frequency plasma, the at least one first reactive gas injector being separated from the at least one second reactive gas injector by one or more vacuum ports and one or more purge gas injectors; and passing a portion of the substrate across the gas distribution plate in a first direction so that the portion of the substrate is sequentially exposed to the tantalum precursor followed by the high frequency plasma.