| 摘要 |
PURPOSE:To increase the workability of die bonding and the electrical contactness of the silicon die and package, by forming stable metall at the back of silicon wafer, and taking this metal as the back side metal at die bonding. CONSTITUTION:The silicon wafer 23 is set to the wafer holder 22 so that the back side of wafer 23 before or after the back check is taken outside. After exhausting the vacuum vessel 21 to 10<-6> to 10<7> Torr, Ar gas in introduced from the gas inlet 26 by 10<-3> to 10<-4> Torr, and the back side oxide film of the wafer 25 is sputter- etched by applying RF bias from the bias source 28 to the holder 22. After the completion of etching, the vacuum vessel is again exhausted again to 10<-6> to 10<-7> Torr and multi-layer evaporation is made to the back side of the wafer 23. After forming metal attachment, the wafer 23 is picked up from the vacuum vessel 21, dicing is made, and further, die bonding is performed. |
