发明名称 Method of crucible-freeze zone-melting a semiconductor rod and apparatus for carrying out the method
摘要 Method of crucible-free zone-melting a semiconductor rod which includes monitoring a melting zone formed in and traveling through a semiconductor rod surrounded by an induction heating coil, producing a respective signal corresponding to values of the actual diameters d of the semiconductor rod at a crystallization interface of the melting zone, comparing the signals corresponding to the actual diameter values d with a signal corresponding to a nominal diameter value ds so as to produce a signal corresponding to a respective first control deviation DELTA d, continuously combining the signals corresponding to the actual diameter values d and the signal corresponding to the respective first control deviation DELTA d to form respective signals corresponding to a new nominal diameter value ds*, respectively, in accordance with the relationships:
申请公布号 US4162367(A) 申请公布日期 1979.07.24
申请号 US19780923384 申请日期 1978.07.10
申请人 SIEMENS AG 发明人 STUT, HANS;TICAK, FRIEDRICH
分类号 C30B13/20;C30B13/28;C30B13/30;H01L21/208;(IPC1-7):H05B5/08;B01J17/08 主分类号 C30B13/20
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